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IRLML0040TRPBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRLML0040TRPBF Fiches technique(HTML) 2 Page - International Rectifier |
2 / 10 page IRLML0040TRPbF 2 www.irf.com D S G Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C ––– 44 56 ––– 62 78 VGS(th) Gate Threshold Voltage 1.0 1.8 2.5 V IDSS ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.1 ––– Ω gfs Forward Transconductance 6.2 ––– ––– S Qg Total Gate Charge ––– 2.6 3.9 Qgs Gate-to-Source Charge ––– 0.7 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 1.4 ––– td(on) Turn-On Delay Time ––– 5.1 ––– tr Rise Time ––– 5.4 ––– td(off) Turn-Off Delay Time ––– 6.4 ––– tf Fall Time ––– 4.3 ––– Ciss Input Capacitance ––– 266 ––– Coss Output Capacitance ––– 49 ––– Crss Reverse Transfer Capacitance ––– 29 ––– Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 10 ––– ns Qrr Reverse Recovery Charge ––– 9.3 ––– nC Static Drain-to-Source On-Resistance m Ω RDS(on) VGS = 4.5V, ID = 2.9A d di/dt = 100A/µs d VGS = 16V VGS = -16V TJ = 25°C, VR = 32V, IF = 1.3 A MOSFET symbol showing the VDS = 20V Conditions VGS = 4.5V VGS = 0V VDS = 25V ƒ = 1.0MHz TJ = 25°C, IS = 1.3A, VGS = 0V d integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 3.6A d VDS = VGS, ID = 25µA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C Drain-to-Source Leakage Current µA VDS = 10V, ID = 3.6A ID = 3.6A nA nC ID = 1.0A RG = 6.8 Ω VGS = 4.5V d VDD = 20V ns pF A 1.3 15 ––– ––– ––– ––– |
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