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KM48V2100B Fiches technique(PDF) 6 Page - Samsung semiconductor |
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KM48V2100B Fiches technique(HTML) 6 Page - Samsung semiconductor |
6 / 8 page KM48C2000B, KM48C2100B CMOS DRAM KM48V2000B, KM48V2100B AC CHARACTERISTICS (Continued) Parameter Symbol -5 -6 -7 Units Notes Min Max Min Max Min Max Data set-up time tDS 0 0 0 ns 8 Data hold time tDH 10 10 15 ns 8 Refresh period (2K, Normal) tREF 32 32 32 ms Refresh period (4K, Normal) tREF 64 64 64 ms Refresh period (L-ver) tREF 128 128 128 ms Write command set-up time tWCS 0 0 0 ns 6 CAS to W delay time tCWD 36 40 50 ns 6 RAS to W delay time tRWD 73 85 100 ns 6 Column address to W delay time tAWD 48 55 65 ns 6 CAS precharge to W delay time tCPWD 53 60 70 ns 6 CAS set-up time (CAS -before-RAS refresh) tCSR 5 5 5 ns CAS hlod time (CAS -before-RAS refresh) tCHR 10 10 15 ns RAS to CAS precharge time tRPC 5 5 5 ns CAS precharge time (CBR counter test tCPT 20 20 30 ns Access time from CAS precharge tCPA 30 35 40 ns 3 Fast Page mode cycle time tPC 35 40 45 ns Fast Page read-modify-write cycle time tPRWC 76 85 100 ns CAS precharge time (Fast Page cycle) tCP 10 10 10 ns RAS pulse width (Fast Page cycle) tRASP 50 200K 60 200K 70 200K ns RAS hold time from CAS precharge tRHCP 30 35 40 ns OE access time tOEA 13 15 20 ns OE to data delay tOED 13 15 20 ns Output buffer turn off delay time from OE tOEZ 0 13 0 15 0 20 ns 5 OE command hold time tOEH 13 15 20 ns Write command set-up time (Test mode in) tWTS 10 10 10 ns 10 Write command hold time (Test mode in) tWTH 10 10 10 ns 10 W to RAS precharge time(C-B-R refresh) tWRP 10 10 10 ns W to RAS hold time(C-B-R refresh) tWRH 10 10 10 ns RAS pulse width (C-B-R self refresh) tRASS 100 100 100 us 12 RAS precharge time (C-B-R self refresh) tRPS 90 110 130 ns 12 CAS hold time (C-B-R self refresh) tCHS -50 -50 -50 ns 12 |
Numéro de pièce similaire - KM48V2100B |
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Description similaire - KM48V2100B |
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