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KM48S16030 Fiches technique(PDF) 4 Page - Samsung semiconductor |
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KM48S16030 Fiches technique(HTML) 4 Page - Samsung semiconductor |
4 / 10 page KM48S16030 CMOS SDRAM REV. 2 Mar. '98 Preliminary DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70 °C) Parameter Symbol Test Condition CAS Latency Version Unit Note -8 -H -L -10 Operating Current (One Bank Active) ICC1 Burst Length =1 tRC ≥ tRC(min) IOL = 0 mA 120 110 110 105 mA 1 Precharge Standby Current in power-down mode ICC2P CKE ≤ VIL(max), tCC = 15ns 1 mA ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞ 1 Precharge Standby Current in non power-down mode ICC2N CKE ≥ VIH(min),CS ≥ VIH(min),tCC=15ns Input signals are changed one time during 30ns 15 mA ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 7 Active Standby Current in power-down mode ICC3P CKE ≤ VIL(max), tCC = 15ns 5 mA ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞ 5 Active Standby Current in non power-down mode (One Bank Active) ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns. 30 mA ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 20 mA Operating Current (Burst Mode) ICC4 IOL = 0 mA Page Burst tCCD = 2CLKs 3 150 125 125 125 mA 1 2 115 125 115 115 Refresh Current ICC5 tRC ≥ tRC(min) 200 165 mA 2 Self Refresh Current ICC6 CKE ≤ 0.2V 1 mA 3 600 uA 4 1. Measured with outputs open. 2. Refresh period is 64ms. 3. KM48S16030T-G** 4. KM48S16030T-F** Note : |
Numéro de pièce similaire - KM48S16030 |
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Description similaire - KM48S16030 |
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