Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

KM48S16030 Fiches technique(PDF) 4 Page - Samsung semiconductor

No de pièce KM48S16030
Description  4M x 8Bit x 4 Banks Synchronous DRAM
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM48S16030 Fiches technique(HTML) 4 Page - Samsung semiconductor

  KM48S16030 Datasheet HTML 1Page - Samsung semiconductor KM48S16030 Datasheet HTML 2Page - Samsung semiconductor KM48S16030 Datasheet HTML 3Page - Samsung semiconductor KM48S16030 Datasheet HTML 4Page - Samsung semiconductor KM48S16030 Datasheet HTML 5Page - Samsung semiconductor KM48S16030 Datasheet HTML 6Page - Samsung semiconductor KM48S16030 Datasheet HTML 7Page - Samsung semiconductor KM48S16030 Datasheet HTML 8Page - Samsung semiconductor KM48S16030 Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 10 page
background image
KM48S16030
CMOS SDRAM
REV. 2 Mar. '98
Preliminary
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-8
-H
-L
-10
Operating Current
(One Bank Active)
ICC1
Burst Length =1
tRC
≥ tRC(min)
IOL = 0 mA
120
110
110
105
mA
1
Precharge Standby Current in
power-down mode
ICC2P
CKE
VIL(max), tCC = 15ns
1
mA
ICC2PS
CKE & CLK
VIL(max), tCC = ∞
1
Precharge Standby Current
in non power-down mode
ICC2N
CKE
≥ VIH(min),CS ≥ VIH(min),tCC=15ns
Input signals are changed one time during
30ns
15
mA
ICC2NS
CKE
≥ VIH(min), CLK
VIL(max), tCC = ∞
Input signals are stable
7
Active Standby Current
in power-down mode
ICC3P
CKE
VIL(max), tCC = 15ns
5
mA
ICC3PS
CKE & CLK
VIL(max), tCC = ∞
5
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during
30ns.
30
mA
ICC3NS
CKE
≥ VIH(min), CLK
VIL(max), tCC = ∞
Input signals are stable
20
mA
Operating Current
(Burst Mode)
ICC4
IOL = 0 mA
Page Burst
tCCD = 2CLKs
3
150
125
125
125
mA
1
2
115
125
115
115
Refresh Current
ICC5
tRC
≥ tRC(min)
200
165
mA
2
Self Refresh Current
ICC6
CKE
0.2V
1
mA
3
600
uA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. KM48S16030T-G**
4. KM48S16030T-F**
Note :


Numéro de pièce similaire - KM48S16030

FabricantNo de pièceFiches techniqueDescription
logo
Samsung semiconductor
KM48S16030A SAMSUNG-KM48S16030A Datasheet
150Kb / 11P
   128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48S16030AT-G/F10 SAMSUNG-KM48S16030AT-G/F10 Datasheet
150Kb / 11P
   128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48S16030AT-G/F8 SAMSUNG-KM48S16030AT-G/F8 Datasheet
150Kb / 11P
   128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48S16030AT-G/FA SAMSUNG-KM48S16030AT-G/FA Datasheet
150Kb / 11P
   128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48S16030AT-G/FH SAMSUNG-KM48S16030AT-G/FH Datasheet
150Kb / 11P
   128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
More results

Description similaire - KM48S16030

FabricantNo de pièceFiches techniqueDescription
logo
Samsung semiconductor
K4S280832D SAMSUNG-K4S280832D Datasheet
111Kb / 11P
   128Mbit SDRAM (4M x 8Bit x 4 Banks Synchronous DRAM)
K4S280832B SAMSUNG-K4S280832B Datasheet
124Kb / 10P
   4M x 8Bit x 4 Banks Sychronous DRAM
KM48S16030A SAMSUNG-KM48S16030A Datasheet
150Kb / 11P
   128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48S16030B SAMSUNG-KM48S16030B Datasheet
133Kb / 11P
   128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S280832A SAMSUNG-K4S280832A Datasheet
108Kb / 10P
   128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S280832M SAMSUNG-K4S280832M Datasheet
126Kb / 10P
   128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S280832C SAMSUNG-K4S280832C Datasheet
112Kb / 11P
   128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
logo
Hynix Semiconductor
HY57V64820HG HYNIX-HY57V64820HG Datasheet
134Kb / 11P
   4 Banks x 2M x 8Bit Synchronous DRAM
HY57V56820B HYNIX-HY57V56820B Datasheet
151Kb / 12P
   4 Banks x 8M x 8Bit Synchronous DRAM
HY57V658020B HYNIX-HY57V658020B Datasheet
146Kb / 12P
   4 Banks x 2M x 8Bit Synchronous DRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com