KM44C4103C datasheet(3/20 Pages) SAMSUNG

No de pièce	KM44C4103C

Description	4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode

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Fabricant	SAMSUNG [Samsung semiconductor]

Site Internet	http://www.samsung.com/Products/Semiconductor

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CMOS DRAM

KM44C4003C, KM44C4103C

ABSOLUTE MAXIMUM RATINGS

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted

to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for

extended periods may affect device reliability.

Parameter

Symbol

Rating

Units

Voltage on any pin relative to VSS

VIN,VOUT

-1.0 to +7.0

V

Voltage on VCC supply relative to VSS

VCC Inputs

-1.0 to +7.0

V

Storage Temperature

Tstg

-55 to +150

°C

Power Dissipation

PD

1

W

Short Circuit Output Current

IOS

50

mA

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70

°C)

*1 : VCC+2.0V/20ns, Pulse width is measured at VCC

*2 : -2.0/20ns, Pulse width is measured at VSS

Parameter

Symbol

Min

Typ

Max

Units

Supply Voltage

VCC

4.5

5.0

5.5

V

Ground

VSS

0

V

Input High Voltage

VIH

2.4

-

VCC+1.0*1

V

Input Low Voltage

VIL

-1.0*2

-

0.8

V

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)

Parameter

Symbol

Min

Max

Units

Input Leakage Current (Any input 0

≤VIN≤VIN+0.5V,

all other input pins not under test=0 Volt)

II(L)

-5

5

uA

Output Leakage Current

(Data out is disabled, 0V

≤VOUT≤VCC)

IO(L)

-5

5

uA

Output High Voltage Level(IOH=-5mA)

VOH

2.4

-

V

Output Low Voltage Level(IOL=4.2mA)

VOL

-

0.4

V

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