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KM416C256D Fiches technique(PDF) 3 Page - Samsung semiconductor

No de pièce KM416C256D
Description  256K x 16Bit CMOS Dynamic RAM with Fast Page Mode
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C256D Fiches technique(HTML) 3 Page - Samsung semiconductor

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KM416C256D, KM416V256D
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended peri-
ods may affect device reliability.
Parameter
Symbol
Rating
Units
3.3V
5V
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +4.6
-1.0 to +7.0
V
Voltage on VCC supply relative to VSS
VCC
-0.5 to +4.6
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
-55 to +150
¡É
Power Dissipation
PD
1
1
W
Short Circuit Output Current
IOS
50
50
mA
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, T A= 0 to 70¡É)
*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS
Parameter
Symbol
3.3V
5V
Units
Min
Typ
Max
Min
Typ
Max
Supply Voltage
VCC
3.0
3.3
3.6
4.5
5.0
5.5
V
Ground
VSS
0
0
0
0
0
0
V
Input High Voltage
VIH
2.0
-
VCC+0.3
2.4
-
VCC+1.0
V
Input Low Voltage
VIL
-0.3
-
0.8
-1.0
-
0.8
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Max
Parameter
Symbol
Min
Max
Units
3.3V
Input Leakage Current (Any input 0¡ÂVIN¡ÂVIN+0.3V,
all other input pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V¡ÂVOUT¡ÂVCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-2mA)
VOH
2.4
-
V
Output Low Voltage Level(IOL=2mA)
VOL
-
0.4
V
5V
Input Leakage Current (Any input 0¡ÂVIN¡ÂVIN+0.5V,
all other input pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V¡ÂVOUT¡ÂVCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-5mA)
VOH
2.4
-
V
Output Low Voltage Level(IOL=4.2mA)
VOL
-
0.4
V
*2
*1
*2
*1


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