Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

KM416V1000C Fiches technique(PDF) 3 Page - Samsung semiconductor

No de pièce KM416V1000C
Description  1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
Download  34 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416V1000C Fiches technique(HTML) 3 Page - Samsung semiconductor

  KM416V1000C Datasheet HTML 1Page - Samsung semiconductor KM416V1000C Datasheet HTML 2Page - Samsung semiconductor KM416V1000C Datasheet HTML 3Page - Samsung semiconductor KM416V1000C Datasheet HTML 4Page - Samsung semiconductor KM416V1000C Datasheet HTML 5Page - Samsung semiconductor KM416V1000C Datasheet HTML 6Page - Samsung semiconductor KM416V1000C Datasheet HTML 7Page - Samsung semiconductor KM416V1000C Datasheet HTML 8Page - Samsung semiconductor KM416V1000C Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 34 page
background image
KM416C1000C, KM416C1200C
CMOS DRAM
KM416V1000C, KM416V1200C
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Parameter
Symbol
Rating
Units
3.3V
5V
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +4.6
-1.0 to +7.0
V
Voltage on VCC supply relative to VSS
VCC
-0.5 to +4.6
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
-55 to +150
°C
Power Dissipation
PD
1
1
W
Short Circuit Output Current
IOS
50
50
mA
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70
°C)
*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS
Parameter
Symbol
3.3V
5V
Units
Min
Typ
Max
Min
Typ
Max
Supply Voltage
VCC
3.0
3.3
3.6
4.5
5.0
5.5
V
Ground
VSS
0
0
0
0
0
0
V
Input High Voltage
VIH
2.0
-
VCC+0.3*1
2.4
-
VCC+1.0*1
V
Input Low Voltage
VIL
-0.3*2
-
0.8
-1.0*2
-
0.8
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Max
Parameter
Symbol
Min
Max
Units
3.3V
Input Leakage Current (Any input 0
≤VIN≤VIN+0.3V,
all other input pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤VOUT≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-2mA)
VOH
2.4
-
V
Output Low Voltage Level(IOL=2mA)
VOL
-
0.4
V
5V
Input Leakage Current (Any input 0
≤VIN≤VIN+0.5V,
all other input pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤VOUT≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-5mA)
VOH
2.4
-
V
Output Low Voltage Level(IOL=4.2mA)
VOL
-
0.4
V


Numéro de pièce similaire - KM416V1000C

FabricantNo de pièceFiches techniqueDescription
logo
Samsung semiconductor
KM416V1000B SAMSUNG-KM416V1000B Datasheet
84Kb / 8P
   1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
More results

Description similaire - KM416V1000C

FabricantNo de pièceFiches techniqueDescription
logo
Samsung semiconductor
K4F171611D SAMSUNG-K4F171611D Datasheet
528Kb / 34P
   1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000B SAMSUNG-KM416C1000B Datasheet
84Kb / 8P
   1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V4000B SAMSUNG-KM416V4000B Datasheet
767Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F661612D SAMSUNG-K4F661612D Datasheet
390Kb / 35P
   4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
K4F661612E SAMSUNG-K4F661612E Datasheet
386Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416V4000C SAMSUNG-KM416V4000C Datasheet
88Kb / 9P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4000B SAMSUNG-KM416C4000B Datasheet
826Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4000C SAMSUNG-KM416C4000C Datasheet
901Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F661612C SAMSUNG-K4F661612C Datasheet
844Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F661612B SAMSUNG-K4F661612B Datasheet
844Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com