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KM4132G271AQ-10 Fiches technique(PDF) 5 Page - Samsung semiconductor |
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KM4132G271AQ-10 Fiches technique(HTML) 5 Page - Samsung semiconductor |
5 / 48 page KM4132G271A CMOS SGRAM Rev.0 (August 1997) DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70¡É VIH(min)/VIL(max)=2.0V/0.8V) Parameter Symbol Test Condition CAS Latency Speed Unit Note -8 -10 -12 Operating Current (One Bank Active) ICC1 Burst Length =1 tRC¡ÃtRC(min), tCC¡ÃtCC(min) IOL = 0 mA 3 180 160 140 mA 1 2 160 140 120 Precharge Standby Cur- rent in power-down mode ICC2P CKE¡ÂVIL(max), tCC = 15ns 2 2 2 mA ICC2PS CKE¡ÂVIL(max), CLK¡ÂVIL(max), tCC = ¡Ä 2 2 2 Precharge Standby Current in non power-down mode ICC2N CKE¡ÃVIH(min), CS¡ÃVIH(min), tCC = 15ns Input signals are changed one time during 30ns 45 45 45 mA ICC2NS CKE¡ÃVIH(min), CLK¡ÂVIL(max), tCC = ¡Ä Input signals are stable 20 20 20 Active Standby Current in power-down mode ICC3P CKE¡ÂVIL(max), tCC = 15ns 4 4 4 mA ICC3PS CKE¡ÂVIL(max), CLK¡ÂVIL(max), tCC = ¡Ä 3.5 3.5 3.5 Active Standby Current in non power-down mode (One Bank Active) ICC3N CKE¡ÃVIH(min), CS¡ÃVIH(min), tCC = 15ns Input signals are changed one time during 30ns 55 55 55 mA ICC3NS CKE¡ÃVIH(min), CLK¡ÂVIL(max), tCC = ¡Ä Input signals are stable 35 35 35 Operating Current (Burst Mode) ICC4 IOL = 0 mA, Page Burst All bank Activated, tCCD = tCCD(min) 3 200 180 160 mA 1, 2 2 180 160 140 Refresh Current ICC5 tRC¡ÃtRC(min) 3 140 120 100 mA 3 2 130 110 90 Self Refresh Current ICC6 CKE¡Â0.2V 1 1 1 mA Operating Current (One Bank Block Write) ICC7 tCC¡ÃtCC(min), IOL=0mA, tBWC(min) 170 150 130 mA 4 1. Measured with outputs open. 2. Assumes minimum column address update cycle tCCD(min). 3. Refresh period is 16ms. 4. Assumes minimum column address update cycle tBWC(min). Note : |
Numéro de pièce similaire - KM4132G271AQ-10 |
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Description similaire - KM4132G271AQ-10 |
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