Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

KM416C1000B Fiches technique(PDF) 5 Page - Samsung semiconductor

No de pièce KM416C1000B
Description  1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C1000B Fiches technique(HTML) 5 Page - Samsung semiconductor

  KM416C1000B Datasheet HTML 1Page - Samsung semiconductor KM416C1000B Datasheet HTML 2Page - Samsung semiconductor KM416C1000B Datasheet HTML 3Page - Samsung semiconductor KM416C1000B Datasheet HTML 4Page - Samsung semiconductor KM416C1000B Datasheet HTML 5Page - Samsung semiconductor KM416C1000B Datasheet HTML 6Page - Samsung semiconductor KM416C1000B Datasheet HTML 7Page - Samsung semiconductor KM416C1000B Datasheet HTML 8Page - Samsung semiconductor  
Zoom Inzoom in Zoom Outzoom out
 5 / 8 page
background image
KM416C1000B, KM416C1200B
CMOS DRAM
KM416V1000B, KM416V1200B
CAPACITANCE (TA=25¡É, VCC=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A11]
CIN1
-
5
pF
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
7
pF
Output capacitance [DQ0 - DQ15]
CDQ
-
7
pF
Test condition (5V device) : VCC=5.0V¡¾10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Random read or write cycle time
tRC
90
110
130
ns
Read-modify-write cycle time
tRWC
133
155
185
ns
Access time from RAS
tRAC
50
60
70
ns
3,4,9
Access time from CAS
tCAC
15
15
20
ns
3,4
Access time from column address
tAA
25
30
35
ns
3,9
CAS to output in Low-Z
tCLZ
0
0
0
ns
3
Output buffer turn-off delay
tOFF
0
13
0
15
0
20
ns
5
Transition time (rise and fall)
tT
3
50
3
50
3
50
ns
2
RAS precharge time
tRP
30
40
50
ns
RAS pulse width
tRAS
50
10K
60
10K
70
10K
ns
RAS hold time
tRSH
13
15
20
ns
CAS hold time
tCSH
50
60
70
ns
CAS pulse width
tCAS
13
10K
15
10K
20
10K
ns
RAS to CAS delay time
tRCD
20
37
20
45
20
50
ns
4
RAS to column address delay time
tRAD
15
25
15
30
15
35
ns
9
CAS to RAS precharge time
tCRP
5
5
5
ns
Row address set-up time
tASR
0
0
0
ns
Row address hold time
tRAH
10
10
10
ns
Column address set-up time
tASC
0
0
0
ns
10
Column address hold time
tCAH
10
10
15
ns
10
Column address to RAS lead time
tRAL
25
30
35
ns
Read command set-up time
tRCS
0
0
0
ns
Read command hold time referenced to CAS
tRCH
0
0
0
ns
7
Read command hold time referenced to RAS
tRRH
0
0
0
ns
7
Write command hold time
tWCH
10
10
15
ns
Write command pulse width
tWP
10
10
15
ns
Write command to RAS lead time
tRWL
15
15
20
ns
Write command to CAS lead time
tCWL
13
15
20
ns
AC CHARACTERISTICS (0¡É¡ÂTA¡Â70¡É, See note 1,2)
Test condition (3.3V device) : VCC=3.3V¡¾0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V


Numéro de pièce similaire - KM416C1000B

FabricantNo de pièceFiches techniqueDescription
logo
Samsung semiconductor
KM416C1000C SAMSUNG-KM416C1000C Datasheet
767Kb / 34P
   1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
More results

Description similaire - KM416C1000B

FabricantNo de pièceFiches techniqueDescription
logo
Samsung semiconductor
KM416C1000C SAMSUNG-KM416C1000C Datasheet
767Kb / 34P
   1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
K4F171611D SAMSUNG-K4F171611D Datasheet
528Kb / 34P
   1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V4000B SAMSUNG-KM416V4000B Datasheet
767Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F661612D SAMSUNG-K4F661612D Datasheet
390Kb / 35P
   4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
K4F661612E SAMSUNG-K4F661612E Datasheet
386Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416V4000C SAMSUNG-KM416V4000C Datasheet
88Kb / 9P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4000B SAMSUNG-KM416C4000B Datasheet
826Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4000C SAMSUNG-KM416C4000C Datasheet
901Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F661612C SAMSUNG-K4F661612C Datasheet
844Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F661612B SAMSUNG-K4F661612B Datasheet
844Kb / 35P
   4M x 16bit CMOS Dynamic RAM with Fast Page Mode
More results


Html Pages

1 2 3 4 5 6 7 8


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com