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K6R1008C1B- Fiches technique(PDF) 5 Page - Samsung semiconductor

No de pièce K6R1008C1B-
Description  128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R1008C1B- Fiches technique(HTML) 5 Page - Samsung semiconductor

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K6R1008C1B-C, K6R1008C1B-I
CMOS SRAM
PRELIMINARY
Rev 2.0
- 5 -
February 1998
PRELIMINARY
PRELIMINARY
Preliminary
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1008C1B-8
K6R1008C1B-10
K6R1008C1B-12
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
8
-
10
-
12
-
ns
Chip Select to End of Write
tCW
6
-
7
-
8
-
ns
Address Set-up Time
tAS
0
-
0
-
0
-
ns
Address Valid to End of Write
tAW
6
-
7
-
8
-
ns
Write Pulse Width (OE High)
tWP
6
-
7
-
8
-
ns
Write Pulse Width (OE Low)
tWP1
8
-
10
-
12
-
ns
Write Recovery Time
tWR
0
-
0
-
0
-
ns
Write to Output High-Z
tWHZ
0
4
0
5
0
6
ns
Data to Write Time Overlap
tDW
4
-
5
-
6
-
ns
Data Hold from Write Time
tDH
0
-
0
-
0
-
ns
End Write to Output Low-Z
tOW
3
-
3
-
3
-
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tAA
tRC
tOH
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
CS
Address
OE
Data out
tAA
tOLZ
tLZ(4,5)
tOH
tOHZ
tRC
tOE
tCO
tPU
tPD
Valid Data
tHZ(3,4,5)
50%
50%
VCC
Current
ICC
ISB


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