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BUK663R5-55C Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce BUK663R5-55C
Description  N-channel TrenchMOS FET
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
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BUK663R5-55C Fiches technique(HTML) 3 Page - NXP Semiconductors

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BUK663R5-55C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Objective data sheet
Rev. 01 — 3 August 2010
3 of 11
NXP Semiconductors
BUK663R5-55C
N-channel TrenchMOS FET
4.
Limiting values
[1]
Continuous current is limited by package.
[2]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3]
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[4]
Refer to application note AN10273 for further information.
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
55
V
VGS
gate-source voltage
-20
20
V
ID
drain current
Tmb =25°C; VGS =10V; see Figure 1
[1]
-
100
A
Tmb =100 °C; VGS = 10 V; see Figure 1 [1]
-
100
A
IDM
peak drain current
Tmb =25°C; tp ≤ 10 µs; pulsed
-
757
A
Ptot
total power dissipation
Tmb =25°C; see Figure 2
-
263
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Source-drain diode
IS
source current
Tmb =25°C
[1]
-
100
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
-
757
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID =100 A; Vsup ≤ 55 V; RGS =50 Ω;
VGS =10V; Tj(init) = 25 °C; unclamped
-
551
mJ
EDS(AL)R
repetitive drain-source
avalanche energy
[2][3][4]
--J
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aac796
0
40
80
120
160
200
0
50
100
150
200
Tmb (°C)
ID
(A)
(1)
Tmb (°C)
0
200
150
50
100
03na19
40
80
120
Pder
(%)
0


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