SS14T3 datasheet(3/5 Pages) ONSEMI

No de pièce	SS14T3

Description	12 V, 7.0 A, Low VCE(sat) NPN Transistor

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Fabricant	ONSEMI [ON Semiconductor]

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NSS12501UW3T2G

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3

150

°C

25

°C

-55

°C

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

0.001

IC, COLLECTOR CURRENT (A)

0.15

0.05

0

0.01

0.1

1.0

10

0.10

IC/IB = 10

VCE(sat) = 150°C

25

°C

-55

°C

0.001

IC, COLLECTOR CURRENT (A)

0.2

0.05

0

0.01

0.1

1.0

10

0.1

0.15

IC/IB = 100

VCE(sat) = -55°C

25

°C

150

°C

Figure 3. DC Current Gain vs.

Collector Current

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

Figure 5. Base Emitter Turn-On Voltage vs.

Collector Current

Figure 6. Saturation Region

IC, COLLECTOR CURRENT (A)

0.01

0.001

1.0

0.4

0.1

0.001

IC, COLLECTOR CURRENT (A)

0.6

0.4

0.2

IB, BASE CURRENT (mA)

0.01

1.0

0.6

0.4

0.2

0

0.01

0.1

10

1.0

100

0.1

0.6

0.8

0.3

150

°C

25

°C

-55

°C

0.8

1.0

10

125

175

225

325

425

525

575

625

0.001

0.01

0.1

1

10

1.0

1.2

1.1

10

IC = 500 mA

10 mA

100 mA 300 mA

VCE = 2.0 V

275

375

475

150

°C (5 V)

150

°C (2 V)

25

°C (5 V)

25

°C (2 V)

-55

°C (5 V)

-55

°C (2 V)

0.3

0.5

0.7

0.9

0.5

0.7

0.9

IC/IB = 10

Numéro de pièce similaire - SS14T3

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	SS14T3	63Kb / 4P	Surface Mount Schottky Power Rectifier July, 2005 ??Rev. 3
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	SS14T3	64Kb / 4P	Surface Mount Schottky Power Rectifier July, 2005 ??Rev. 3
	SS14T3	87Kb / 5P	12 V, 1 A, Low VCE(sat) PNP Transistor September, 2007 - Rev. 0
	SS14T3	58Kb / 4P	Power MOSFET 170 mAmps, 100 Volts March, 2005 ??Rev. 5

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