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BYM36C Fiches technique(PDF) 1 Page - Gulf Semiconductor |
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BYM36C Fiches technique(HTML) 1 Page - Gulf Semiconductor |
1 / 2 page BYM36C SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: : : :600V CURRENT: 3.0A FEATURE SOD-64 Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability MECHANICAL DATA Case: SOD-64 sintered glass case Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Polarity: color band denotes cathode end Mounting position: any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25 °C, unless otherwise stated) SYMBOL BYM36C units Maximum Recurrent Peak Reverse Voltage VRRM 600 V Maximum RMS Voltage VRMS 420 V Maximum DC blocking Voltage VDC 600 V Reverse avalanche breakdown voltage at IR = 0.1 mA V(BR)R 700min V Maximum Average Forward Rectified Current 3/8”lead length at Ttp =55 °C IFAV 3.0 A Peak Forward Surge Current at Tp=10ms half sinewave IFSM 65 A Maximum Forward Voltage at rated Forward Current VF 1.60 V Non-repetitive peak reverse avalanche energy (Note 1) ERSM 10 mJ Maximum DC Reverse Current Ta =25 °C at rated DC blocking voltage Ta =165 °C IR 5.0 150.0 µA Maximum Reverse Recovery Time (Note 2) Trr 100 nS Diode Capacitance (Note 3) Cd 85 pF Typical Thermal Resistance (Note 4) Rth(ja) 75 °C /W Storage and Operating Junction Temperature Tstg, Tj -65 to +175 °C Note: 1. IR=400mA; Tj=Tjmax prior to surge; inductive load switched off 2. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 3. Measured at 1.0 MHz and applied reverse voltage of 0Vdc 4. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick Rev.A1 www.gulfsemi.com |
Numéro de pièce similaire - BYM36C |
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Description similaire - BYM36C |
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