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NBVSBA027LU1TAG Fiches technique(PDF) 4 Page - ON Semiconductor

No de pièce NBVSBA027LU1TAG
Description  2.5 V/3.3 V, LVPECL Voltage-Controlled Crystal Oscillator (VCXO) PureEdge Product Series
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NBVSBA027LU1TAG Fiches technique(HTML) 4 Page - ON Semiconductor

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NBVSBAXXX Series
http://onsemi.com
4
Table 6. AC CHARACTERISTICS (VDD = 2.5 ±5%, VDD = 3.3 ±10%, GND = 0 V, TA = -40°C to +85°C)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
fCLKOUT
Output Clock Frequency
NBVSBA011
122.88
MHz
NBVSBA027
148.50
NBVSBA018
155.52
NBVSBA017
156.25
NBVSBA015
200.00
NBVSBA024
622.08
NBVSBA026
644.53
Df
Frequency Stability
(Note 5)
±50
ppm
tjit(f)
RMS Phase Jitter
12 kHz to 20 MHz
0.5
0.9
ps
tjitter
Cycle to Cycle, RMS
1000 Cycles
2
8
ps
Cycle to Cycle, Peak-to-Peak
1000 Cycles
10
30
ps
Period, RMS
10,000 Cycles
1
4
ps
Period, Peak-to-Peak
10,000 Cycles
6
20
ps
tOE/OD
Output Enable/Disable Time
200
ns
FP
Crystal Pullability (Note 4)
0 ≤ VC ≤ 3.3 V
±100
ppm
VC(bw)
Control Voltage Bandwidth
- 3 dB
20
KHz
tDUTY_CYCLE
Output Clock Duty Cycle
(Measured at Cross Point)
45
50
55
%
tR
Output Rise Time (20% and 80%)
245
400
ps
tF
Output Fall Time (80% and 20%)
245
400
ps
tstart
Start-up Time
1
5
ms
Aging
1st Year
3
ppm
Every Year After 1st
1
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Gain transfer is positive with a rate of 95 ppm/V.
5. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration and first year aging.


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