ESD7C5.0DT5G datasheet(2/4 Pages) ONSEMI

No de pièce	ESD7C5.0DT5G

Description	Transient Voltage Suppressors Micro-Packaged Diodes for ESD Protection

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Fabricant	ONSEMI [ON Semiconductor]

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ESD7C3.3DT5G SERIES

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ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

Ppk

Peak Power Dissipation

C

Max. Capacitance @VR = 0 and f = 1 MHz

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Uni-Directional TVS

IPP

IF

V

I

IR

IT

VRWM

VC VBR

VF

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA)

Device

Marking

VRWM (V)

IR (mA) @ VRWM

VBR (V) @ IT

(Note 2)

IT

C (pF)

(Note 3)

C (pF)

(Note 3)

VC

Max

Min

mA

Typ

Max

Per IEC61000-4-2

(Note 4)

ESD7C3.3DT5G

L5

3.3

1.0

5.0

1.0

12

13

Figures 1 and 2

See Below

(Note 5)

ESD7C5.0DT5G

L4

5.0

0.5

11

1.0

6.0

6.2

2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

3. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C.

4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

5. ESD7C5.0DT5G shown below. Other voltages available upon request.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000-4-2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000-4-2

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ON Semiconductor	ESD7C5.0DT5G	110Kb / 4P	Transient Voltage Suppressors March, 2012 ??Rev. 3

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