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CAT28LV256HI20T Fiches technique(PDF) 4 Page - ON Semiconductor |
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CAT28LV256HI20T Fiches technique(HTML) 4 Page - ON Semiconductor |
4 / 12 page CAT28LV256 4 Doc. No. MD-1071, Rev. E © 2009 SCILLC. All rights reserved. Characteristics subject to change without notice D.C. OPERATING CHARACTERISTICS VCC = 3.0V to 3.6V, unless otherwise specified Limits Symbol Parameter Min. Typ. Max. Units Test Conditions ICC VCC Current (Operating, TTL) 15 mA CE = OE = VIL, f = 1/tRC min, All I/O’s Open ISBC(2) VCC Current (Standby, CMOS) 150 µA CE = VIHC, All I/O’s Open ILI Input Leakage Current –1 1 µAVIN = GND to VCC ILO Output Leakage Current –5 5 µAVOUT = GND to VCC, CE = VIH VIH(2) High Level Input Voltage 2 VCC +0.3 V VIL Low Level Input Voltage –0.3 0.6 V VOH High Level Output Voltage 2 V IOH = –100 µA VOL Low Level Output Voltage 0.3 V IOL = 1.0mA VWI Write Inhibit Voltage 2 V A.C. CHARACTERISTICS, Read Cycle VCC = 3.0V to 3.6V, unless otherwise specified 28LV256-20 28LV256-25 28LV256-30 Symbol Parameter Min. Max. Min. Max. Min. Max. Units tRC Read Cycle Time 200 250 300 ns tCE CE Access Time 200 250 300 ns tAA Address Access Time 200 250 300 ns tOE OE Access Time 80 100 110 ns tLZ(1) CE Low to Active Output 0 0 0 ns tOLZ(1) OE Low to Active Output 0 0 0 ns tHZ(1)(3) CE High to High-Z Output 50 55 60 ns tOHZ(1)(3) OE High to High-Z Output 50 55 60 ns tOH(1) Output Hold from Address Change 0 0 0 ns Note: (1) This parameter is tested initially and after a design or process change that affects the parameter. (2) VIHC = VCC –0.3V to VCC +0.3V. (3) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer. |
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