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CAT22C10LE30 Fiches technique(PDF) 8 Page - ON Semiconductor |
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CAT22C10LE30 Fiches technique(HTML) 8 Page - ON Semiconductor |
8 / 10 page CAT22C10 8 Doc. No. MD-1082, Rev. R © 2009 SCILLC. All rights reserved. Characteristics subject to change without notice. Recall At anytime, except during a store operation, taking the RECALL pin low will initiate a recall operation. This is independent of the state of CS, WE, or A0–A5. After the RECALL pin has been held low for the duration of the Recall Pulse Width (tRCP), the recall will continue inde- pendent of any other inputs. During the recall, the entire contents of the EEPROM array is transferred to the Static RAM array. The first byte of data may be externally accessed after the recalled data access time from end of recall (tARC) is met. After this, any other byte may be accessed by using the normal read mode. If the RECALL pin is held low for the entire Recall Cycle time (tRCC), the contents of the Static RAM may be immediately accessed by using the normal read mode. A recall operation can be performed an unlimited num- ber of times without affecting the integrity of the data. The outputs I/O0–I/O3 will go into the high impedance state as long as the RECALL signal is held low. Store At any time, except during a recall operation, taking the STORE pin low will initiate a store operation. This takes place independent of the state of CS, WE or A0–A5. The STORE pin must be held low for the duration of the Store Pulse Width (tSTP) to ensure that a store operation is initiated. Once initiated, the STORE pin becomes a “Don’t Care”, and the store operation will complete its transfer of the entire contents of the Static RAM array into the EEPROM array within the Store Cycle time (tSTC). If a store operation is initiated during a write cycle, the contents of the addressed Static RAM byte and its corresponding byte in the EEPROM array will be un- known. During the store operation, the outputs are in a high impedance state. A minimum of 100,000 store opera- tions can be performed reliably and the data written into the EEPROM array has a minimum data retention time of 10 years. DATA PROTECTION DURING POWER-UP AND POWER-DOWN The CAT22C10 has on-chip circuitry which will prevent a store operation from occurring when VCC falls below 3.0V typ. This function eliminates the potential hazard of spurious signals initiating a store operation when the system power is below 3.0V typ. Figure 4. Recall Cycle Timing Figure 5. Store Cycle Timing CS DATA I/O RECALL ADDRESS DATA UNDEFINED DATA VALID HIGH-Z tRCZ tORC tARC tRCP tRCC STORE DATA I/O tSTZ HIGH-Z tSTP tSTC |
Numéro de pièce similaire - CAT22C10LE30 |
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Description similaire - CAT22C10LE30 |
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