BCW66GLT3G datasheet(2/3 Pages) ONSEMI

No de pièce	BCW66GLT3G

Description	General Purpose Transistor NPN Silicon

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BCW66GLT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)

V(BR)CEO

45

−

Vdc

Collector−Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0)

V(BR)CES

75

−

Vdc

Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCE = 45 Vdc, IE = 0)

(VCE = 45 Vdc, IE = 0, TA = 150°C)

ICES

−

20

nAdc

mAdc

Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0)

IEBO

−

20

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

hFE

50

110

160

60

−

400

−

Collector−Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 100 mAdc, IB = 10 mAdc)

VCE(sat)

−

0.7

0.3

Vdc

Base −Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

−

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT

100

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

12

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

80

pF

Noise Figure

(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

SWITCHING CHARACTERISTICS

Turn−On Time (IB1 = IB2 = 15 mAdc)

ton

−

100

ns

Turn−Off Time (IC = 150 mAdc, RL = 150 W)

toff

−

400

ns

10 ms

100 ms

1 s

Thermal Limit

1 ms

Figure 1. Safe Operating Area

VCE (Vdc)

100

1.0

0.1

0.001

0.1

10

1.0

10

0.01

Single Pulse Test at TA = 25°C

Numéro de pièce similaire - BCW66GLT3G

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