Moteur de recherche de fiches techniques de composants électroniques |
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TPC8115 Fiches technique(PDF) 4 Page - Toshiba Semiconductor |
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TPC8115 Fiches technique(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPC8115 2006-11-15 4 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) 0 −2 −4 −6 −8 −10 −0.4 −0.6 −0.8 −1 0 −0.2 −0.4 −0.6 −0.8 0 −0.2 −10 −1.8 −2 −4 −2.5 −3 −1.6 −1.55 −1.65 VGS = −1.5 V Common source Ta = 25°C Pulse test −2 −3 −4 −5 0 −20 −30 −40 −10 0 −1 Common source Ta = 25°C Pulse test −3 −2.5 −2 −10 −1.8 −4.5 −1.65 −1.55 VGS = −1.5 V −1.6 −2 −3 −4 −5 0 −20 −30 −40 −10 0 −1 100 Ta = −55°C 25 Common source VDS = −10 V Pulse test −4 −6 −8 −10 0 −0.2 −0.3 −0.4 −0.5 −0.1 0 −2 ID = −10 A −2.5 −5.0 Common source Ta = 25°C Pulse test 1 −0.1 −1 −10 −100 10 100 1000 Ta = −55°C 100 25 Common source VDS = −10 V Pulse test −100 1 −0.1 −1 −10 10 100 −4.5 VGS = −1.8 V Common source Ta = 25°C Pulse test −2.5 |
Numéro de pièce similaire - TPC8115 |
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Description similaire - TPC8115 |
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