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TPC8211 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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TPC8211 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TPC8211 2007-01-16 2 Thermal Characteristics Characteristics Symbol Max Unit Single-device operation (Note 3a) Rth (ch-a) (1) 83.3 Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Rth (ch-a) (2) 114 Single-device operation (Note 3a) Rth (ch-a) (1) 167 Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Rth (ch-a) (2) 278 °C/W Marking (Note 6) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 5.5 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: • on lower left of the marking indicates Pin 1. FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year, sequential number up to 52 or 53) Year of manufacture (The last digit of a year) TP C 8 21 1 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Numéro de pièce similaire - TPC8211_07 |
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Description similaire - TPC8211_07 |
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