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TPC6003 Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce TPC6003
Description  Silicon N Channel MOS Type (U-MOSIII)
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6003 Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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TPC6003
2007-01-15
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6003
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 7 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
6
Drain current
Pulse
(Note 1)
IDP
24
A
Drain power dissipation
(t
= 5 s)
(Note 2a)
PD
2.2
W
Drain power dissipation
(t
= 5 s)
(Note 2b)
PD
0.7
W
Single pulse avalanche energy (Note 3)
EAS
5.8
mJ
Avalanche current
IAR
3
A
Repetitive avalanche energy
(Note 4)
EAR
0.22
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
= 5 s)
(Note 2a)
Rth (ch-a)
56.8
°C/W
Thermal resistance, channel to ambient
(t
= 5 s)
(Note 2b)
Rth (ch-a)
178.5
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
6
4
1
2
3
5


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