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PZT4403 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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PZT4403 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 9 page PZT4403_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 2 March 2010 3 of 9 NXP Semiconductors PZT4403 40 V, 600 mA PNP switching transistor 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. Table 7. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −40 V; IE =0A - - −50 nA IEBO emitter-base cut-off current VEB = −5V; IC =0A - - −50 nA hFE DC current gain VCE = −1V; IC = −0.1 mA 30 - - VCE = −1V; IC = −1mA 60 - - VCE = −1V; IC = −10 mA 100 - - VCE = −1V; IC = −150 mA [1] 100 - 300 VCE = −2V; IC = −500 mA [1] 20 - - VCEsat collector-emitter saturation voltage IC = −150 mA; IB = −15 mA [1] -- −400 mV IC = −500 mA; IB = −50 mA [1] -- −750 mV VBEsat base-emitter saturation voltage IC = −150 mA; IB = −15 mA [1] -- −950 mV IC = −500 mA; IB = −50 mA [1] -- −1300 mV td delay time VCC = −29.5 V; IC = −150 mA; IBon = −15 mA; IBoff =15mA; VBB =3.5 V -- 15 ns tr rise time - - 30 ns ton turn-on time - - 40 ns ts storage time - - 300 ns tf fall time - - 50 ns toff turn-off time - - 350 ns fT transition frequency VCE = −10 V; IC = −20 mA; f=100MHz 200 - - MHz Cc collector capacitance VCB = −5V; IE =ie =0A; f=1MHz -- 8.5 pF Ce emitter capacitance VEB = −500 mV; IC =ic =0A; f=1MHz -- 35 pF |
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