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TPCP8006 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TPCP8006 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCP8006 2009-12-08 1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8006 Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.) • High forward transfer admittance:|Yfs| = 36 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V DC (Note 1) ID 9.1 Drain current Pulse (Note 1) IDP 36.4 A Drain power dissipation (t = 5 s) (Note 2a) PD 1.68 Drain power dissipation (t = 5 s) (Note 2b) PD 0.84 W Single pulse avalanche energy (Note 3) EAS 21.5 mJ Avalanche current IAR 9.1 A Repetitive avalanche energy (Note 4) EAR 0.168 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 1,2,3 :SOURCE 4 : GATE 5,6,7,8:DRAIN 0.8 ± 0.05 4 5 8 0.475 S 0.025 S M 0.05 A 1 M 0.05 B 0.65 A B 2.9 ± 0.1 0.33 ± 0.05 0.17 ± 0.02 0.28 + 0.1 - 0.11 1.12 + 0.13 - 0.12 1.12 + 0.13 - 0.12 0.28 + 0.1 - 0.11 JEDEC ⎯ JEITA ⎯ TOSHIBA 2-3V1K Weight: 0.017g (typ.) Circuit Configuration Marking (Note 5) 1 2 3 4 8 7 6 5 Lot No. 1 2 3 4 8 7 6 5 8006 * |
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