Moteur de recherche de fiches techniques de composants électroniques |
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TPCC8103 Fiches technique(PDF) 4 Page - Toshiba Semiconductor |
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TPCC8103 Fiches technique(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPCC8103 2010-01-14 4 1 −0.1 −10 100 −100 −10 VGS = −4 V −1 10 10 100 −0.1 −1 25 100 Ta = −55°C −100 1 1000 −10 0.1 0 −0.8 0 ID = −18 A −2 −4 −8 −4.5 −9 −0.6 −10 −1.0 −6 −0.4 −0.2 0 0 −1 −2 −3 −5 Ta = −55°C 25 100 −30 −4 −10 −40 −20 −2 −40 −30 −20 −10 0 −50 0 −0.8 VGS = −2.6 V −1.6 −1.2 −0.4 −3.6 −4 −3.8 −3.2 −4.5 −6 −5 −10 −8 −3.4 −2.8 −3 ID – VDS −20 −12 −8 0 −16 −4 0 −0.2 −0.4 −0.6 −0.8 VGS = −2.4 V −3 −3.2 −10 −1 −4.5 −4 −2.6 −6 −2.8 −8 −5 ID – VDS Drain-source voltage VDS (V) Drain current ID (A) RDS (ON) – ID Drain current ID (A) ⎪Yfs⎪ – ID Drain-source voltage VDS (V) Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Common source Ta = 25°C Pulse test Common source VDS = −10 V Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source VDS = -10 V Pulse test −3.4 |
Numéro de pièce similaire - TPCC8103 |
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Description similaire - TPCC8103 |
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