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DMG4712SSS Fiches technique(PDF) 1 Page - Diodes Incorporated |
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DMG4712SSS Fiches technique(HTML) 1 Page - Diodes Incorporated |
1 / 6 page DMG4712SSS Document number: DS32040 Rev. 5 - 2 1 of 6 www.diodes.com June 2010 © Diodes Incorporated DMG4712SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features • High Density UMOS with Schottky Barrier Diode • Low Leakage Current at High Temperature • High Conversion Efficiency • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Utilizes Diodes’ Monolithic SiMFET Technology to Increase Conversion Efficiency • UIS Tested, RG Tested • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram Below • Marking Information: See Page 5 • Ordering Information: See Page 5 • Weight: 0.072 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C ID 11.2 6.6 A Pulsed Drain Current (Note 4) IDM 63 A Avalanche Current (Notes 4 & 5) IAR 30 A Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH EAR 45 mJ Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 1.55 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) RθJA 81.3 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on 1in * 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design. 4. Repetitive rating, pulse width limited by junction temperature. 5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C. L = 0.1mH, VDD = 0V, RG = Ω0, rated VDS = 30V, and VGS = 10V. Top View Top View Internal Schematic S D D G D D S S SiMFET Schottky integrated MOSFET |
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