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DMG4712SSS Fiches technique(PDF) 1 Page - Diodes Incorporated

No de pièce DMG4712SSS
Description  N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMG4712SSS Fiches technique(HTML) 1 Page - Diodes Incorporated

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DMG4712SSS
Document number: DS32040 Rev. 5 - 2
1 of 6
www.diodes.com
June 2010
© Diodes Incorporated
DMG4712SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
High Density UMOS with Schottky Barrier Diode
Low Leakage Current at High Temperature
High Conversion Efficiency
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Utilizes Diodes’ Monolithic SiMFET Technology to Increase
Conversion Efficiency
UIS Tested, RG Tested
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.072 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 3)
Steady
State
TA = 25°C
TA = 85°C
ID
11.2
6.6
A
Pulsed Drain Current (Note 4)
IDM
63
A
Avalanche Current (Notes 4 & 5)
IAR
30
A
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH
EAR
45
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 3)
PD
1.55
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
RθJA
81.3
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1in * 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C. L = 0.1mH, VDD = 0V, RG = Ω0, rated VDS = 30V, and VGS = 10V.
Top View
Top View
Internal Schematic
S
D
D
G
D
D
S
S
SiMFET
Schottky integrated MOSFET


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