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DMG1013T-7 Fiches technique(PDF) 2 Page - Diodes Incorporated |
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DMG1013T-7 Fiches technique(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMG1013T Document number: DS31784 Rev. 4 - 2 2 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1013T Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - -100 nA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS - - ±2.0 μA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(th) -0.5 - -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) - 0.5 0.7 Ω VGS = -4.5V, ID = -350mA 0.7 0.9 VGS = -2.5V, ID = -300mA 1.0 1.3 VGS = -1.8V, ID = -150mA Forward Transfer Admittance |Yfs| - 0.9 - S VDS = -10V, ID = -250mA Diode Forward Voltage (Note 4) VSD -0.8 -1.2 V VGS = 0V, IS = -150mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss - 59.76 - pF VDS = -16V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 12.07 - pF Reverse Transfer Capacitance Crss - 6.36 - pF Total Gate Charge Qg - 622.4 - pC VGS = -4.5V, VDS = -10V, ID = -250mA Gate-Source Charge Qgs - 100.3 - pC Gate-Drain Charge Qgd - 132.2 - pC Turn-On Delay Time tD(on) - 5.1 - ns VDD = -10V, VGS = -4.5V, RL = 47Ω, RG = 10Ω, ID = -200mA Turn-On Rise Time tr - 8.1 - ns Turn-Off Delay Time tD(off) - 28.4 - ns Turn-Off Fall Time tf - 20.7 - ns Notes: 4. Short duration pulse test used to minimize self-heating effect. 0 0.3 0.6 0.9 1.2 1.5 01 2 3 4 5 Fig. 1 Typical Output Characteristic -V , DRAIN-SOURCE VOLTAGE (V) DS V = -1.2V GS V = -1.5V GS V = -2.0V GS V = -2.5V GS V = -3.0V GS V = -4.5V GS V = -8.0V GS 0 0.5 1 1.5 2 2.5 3 Fig. 2 Typical Transfer Characteristic -V , GATE-SOURCE VOLTAGE (V) GS 0 2 4 6 8 10 T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A V = -5V DS |
Numéro de pièce similaire - DMG1013T-7 |
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Description similaire - DMG1013T-7 |
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