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BUK7610-100B Fiches technique(PDF) 7 Page - NXP Semiconductors |
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BUK7610-100B Fiches technique(HTML) 7 Page - NXP Semiconductors |
7 / 14 page BUK7610-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 12 April 2010 7 of 14 NXP Semiconductors BUK7610-100B N-channel TrenchMOS standard level FET Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Forward transconductance as a function of drain current; typical values 03ng76 0 50 100 150 200 250 300 350 02468 10 VDS (V) ID (A) VGS = 4.5 V 5.5 6.5 20 10 8 7 03ng75 7 8 9 10 11 5 10 15 20 VGS (V) RDSon (mΩ) 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max 03ng73 0 20 40 60 80 100 0 20 40 60 80 ID (A) gfs (S) |
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