BUJD105AD_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 8 May 2009

2 of 12

NXP Semiconductors

BUJD105AD

NPN power transistor with integrated diode

2.

Pinning information

[1]

It is not possible to make a connection to pin 2 of the SOT428 (DPAK) package.

3.

Ordering information

4.

Limiting values

Table 2.

Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1B

base

SOT428

(SC-63; DPAK)

2

C

collector

[1]

3

E

emitter

mb

C

mounting base; connected to

collector

3

2

mb

1

sym131

C

E

B

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUJD105AD

SC-63;

DPAK

plastic single-ended surface-mounted package (DPAK); 3 leads (one

lead cropped)

SOT428

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-emitter peak

voltage

-

700

V

collector-base voltage

-

700

V

collector-emitter

voltage

-

400

V

collector current

-

8

A

peak collector current

see Figure 1; see Figure 2

-16

A

base current

-4

A

peak base current

-

8

A

total power dissipation

-80

W

storage temperature

-65

150

°C

junction temperature

-

150

°C