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BTA201W Fiches technique(PDF) 8 Page - NXP Semiconductors |
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BTA201W Fiches technique(HTML) 8 Page - NXP Semiconductors |
8 / 13 page BTA201W_SER_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 13 March 2008 8 of 13 NXP Semiconductors BTA201W series E 1 A Three-quadrant triacs high commutation Vo = 1.02 V; Rs = 358 mΩ (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj =25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature Gate open circuit Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values VT (V) 0 0.4 0.8 1.2 1.6 2 0 0.4 0.8 1.2 1.6 2 (A) IT (1) (2) (3) 003aaa960 Tj (°C) −50 150 100 050 001aab100 1 2 3 0 IL IL(25°C) Tj (°C) −50 150 100 050 001aab099 1 2 3 0 IH IH(25°C) 001aag740 103 102 104 dVD/dt (V/ µs) 10 Tj (°C) 0 150 50 100 |
Numéro de pièce similaire - BTA201W_08 |
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Description similaire - BTA201W_08 |
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