BF1210 datasheet(3/21 Pages) NXP

No de pièce	BF1210

Description	Dual N-channel dual gate MOSFET

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BF1210_1

Product data sheet

Rev. 01 — 25 October 2006

3 of 21

NXP Semiconductors

BF1210

Dual N-channel dual gate MOSFET

4.

Marking

5.

Limiting values

[1]

Tsp is the temperature at the soldering point of the source lead.

Table 4.

Marking

Type number

Marking

Description

BF1210

*AB

* = p : made in Hong Kong

* = t : made in Malaysia

* = w : made in China

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per MOSFET

VDS

drain-source voltage

-

6

V

ID

drain current

DC

-

30

mA

IG1

gate1 current

-

±10

mA

IG2

gate2 current

-

±10

mA

Ptot

total power dissipation

Tsp ≤ 107 °C

[1] -

180

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Fig 1.

Power derating curve

Tsp (˚C)

0

200

150

50

100

001aac193

100

150

50

200

250

Ptot

(mW)

0

Numéro de pièce similaire - BF1210

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NXP Semiconductors	BF1210	252Kb / 21P	Dual N-channel dual gate MOSFET Rev. 01-25 October 2006
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NXP Semiconductors	BF1214	211Kb / 18P	Dual N-channel dual gate MOSFET Rev. 01-30 October 2007
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