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BF1210 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BF1210 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 21 page BF1210_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 25 October 2006 3 of 21 NXP Semiconductors BF1210 Dual N-channel dual gate MOSFET 4. Marking 5. Limiting values [1] Tsp is the temperature at the soldering point of the source lead. Table 4. Marking Type number Marking Description BF1210 *AB * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per MOSFET VDS drain-source voltage - 6 V ID drain current DC - 30 mA IG1 gate1 current - ±10 mA IG2 gate2 current - ±10 mA Ptot total power dissipation Tsp ≤ 107 °C [1] - 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Fig 1. Power derating curve Tsp (˚C) 0 200 150 50 100 001aac193 100 150 50 200 250 Ptot (mW) 0 |
Numéro de pièce similaire - BF1210 |
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Description similaire - BF1210 |
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