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BF820 Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce BF820
Description  NPN high-voltage transistors
Download  6 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BF820 Fiches technique(HTML) 3 Page - NXP Semiconductors

  BF820 Datasheet HTML 1Page - NXP Semiconductors BF820 Datasheet HTML 2Page - NXP Semiconductors BF820 Datasheet HTML 3Page - NXP Semiconductors BF820 Datasheet HTML 4Page - NXP Semiconductors BF820 Datasheet HTML 5Page - NXP Semiconductors BF820 Datasheet HTML 6Page - NXP Semiconductors  
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 3 / 6 page
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2004 Jan 16
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF820; BF822
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BF820
300
V
BF822
250
V
VCEO
collector-emitter voltage
open base
BF820
300
V
BF822
250
V
VEBO
emitter-base voltage
open collector
5
V
IC
collector current (DC)
50
mA
ICM
peak collector current
100
mA
IBM
peak base current
50
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0; VCB = 200 V
10
nA
IE = 0; VCB = 200 V; Tj =150 °C
10
µA
IEBO
emitter-base cut-off current
IC = 0; VEB = 5 V
50
nA
hFE
DC current gain
IC = 25 mA; VCE = 20 V
50
VCEsat
collector-emitter saturation
voltage
IC = 30 mA; IB = 5 mA
600
mV
Cre
feedback capacitance
IC = Ic = 0; VCB = 30 V; f = 1 MHz
1.6
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz 60
MHz


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