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BF820 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BF820 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 6 page 2004 Jan 16 3 NXP Semiconductors Product data sheet NPN high-voltage transistors BF820; BF822 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF820 − 300 V BF822 − 250 V VCEO collector-emitter voltage open base BF820 − 300 V BF822 − 250 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 50 mA ICM peak collector current − 100 mA IBM peak base current − 50 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current IE = 0; VCB = 200 V − 10 nA IE = 0; VCB = 200 V; Tj =150 °C − 10 µA IEBO emitter-base cut-off current IC = 0; VEB = 5 V − 50 nA hFE DC current gain IC = 25 mA; VCE = 20 V 50 − VCEsat collector-emitter saturation voltage IC = 30 mA; IB = 5 mA − 600 mV Cre feedback capacitance IC = Ic = 0; VCB = 30 V; f = 1 MHz − 1.6 pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 60 − MHz |
Numéro de pièce similaire - BF820 |
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Description similaire - BF820 |
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