BAP51LX_1

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 01 — 26 June 2007

2 of 8

NXP Semiconductors

BAP51LX

Silicon PIN diode

4.

Marking

5.

Limiting values

6.

Thermal characteristics

7.

Characteristics

Table 3.

Marking

Type number

Marking code

BAP51LX

L2

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

reverse voltage

-

60

V

forward current

-

100

mA

total power dissipation

-

140

mW

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction

to solder point

66

K/W

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

-

0.95

1.1

V

reverse current

-

-

100

nA

diode capacitance

see Figure 1; f = 1 MHz;

-

0.30

-

pF

-

0.22

0.40

pF

-

0.17

0.30

pF

diode forward resistance

see Figure 2; f = 100 MHz;

-

4.9

9

Ω

-

3.2

6.5

Ω

-

1.4

2.5

Ω

-

0.9

1.5

Ω

ISL

isolation

f = 900 MHz

-

19

-

dB

f = 1800 MHz

-

15

-

dB

f = 2450 MHz

-

13

-

dB