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74LVC1G58 Fiches technique(PDF) 10 Page - NXP Semiconductors

No de pièce 74LVC1G58
Description  Low-power configurable multiple function gate
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

74LVC1G58 Fiches technique(HTML) 10 Page - NXP Semiconductors

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74LVC1G58_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 April 2009
10 of 18
NXP Semiconductors
74LVC1G58
Low-power configurable multiple function gate
[1]
Typical values are measured at Tamb =25 °C.
14. Waveforms transfer characteristics
VH
hysteresis voltage
(VT+ − VT−);
see Figure 14, Figure 15,
Figure 16 and Figure 17
VCC = 1.8 V
0.30
0.48
0.62
0.23
0.62
V
VCC = 2.3 V
0.40
0.64
0.80
0.34
0.80
V
VCC = 3.0 V
0.50
0.75
1.00
0.44
1.00
V
VCC = 4.5 V
0.71
0.97
1.20
0.65
1.20
V
VCC = 5.5 V
0.71
1.13
1.40
0.65
1.40
V
Table 12.
Transfer characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
VT+ and VT− limits are at 70 % and 20 %.
Fig 14. Transfer characteristics
Fig 15. Definition of VT+, VT− and VH
mna207
VO
VI
VH
VT+
VT−
mna208
VO
VI
VH
VT+
VT−
VT+ and VT− limits are at 70 % and 20 %.
Fig 16. Transfer characteristics
Fig 17. Definition of VT+, VT− and VH
001aab684
VO
VI
VH
VT+
VT−
mnb155
VO
VI
VH
VT+
VT−


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