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74HC3G34 Fiches technique(PDF) 5 Page - NXP Semiconductors |
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74HC3G34 Fiches technique(HTML) 5 Page - NXP Semiconductors |
5 / 13 page 74HC_HCT3G34_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 7 May 2009 5 of 13 NXP Semiconductors 74HC3G34; 74HCT3G34 Triple buffer gate [1] All typical values are measured at Tamb = 25 °C. 11. Dynamic characteristics 74HCT3G34 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA; VCC = 4.5 V 4.4 4.5 - 4.4 - V IO = −4.0 mA; VCC = 4.5 V 4.13 4.32 - 3.7 - V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA; VCC = 4.5 V - 0 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.33 - 0.4 V II input leakage current VI =VCC or GND; VCC = 5.5 V - - ±1.0 - ±1.0 µA ICC supply current VI =VCC or GND; IO =0A; VCC = 5.5 V - - 10 - 20 µA ∆ICC additional supply current per input; VCC = 4.5 V to 5.5 V; VI =VCC − 2.1 V; IO =0A - - 375 - 410 µA CI input capacitance - 1.5 - - - pF Table 7. Static characteristics …continued Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max 74HC3G34 tpd propagation delay nA to nY; see Figure 5 [2] VCC = 2.0 V - 29 95 - 125 ns VCC = 4.5 V - 9 19 - 25 ns VCC = 6.0 V - 8 16 - 20 ns tt transition time nY; see Figure 5 [3] VCC = 2.0 V - 18 95 - 125 ns VCC = 4.5 V - 6 19 - 25 ns VCC = 6.0 V - 5 16 - 20 ns CPD power dissipation capacitance VI = GND to VCC [4] -10- - - pF |
Numéro de pièce similaire - 74HC3G34 |
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