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74HCT3G07DP Fiches technique(PDF) 5 Page - NXP Semiconductors |
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74HCT3G07DP Fiches technique(HTML) 5 Page - NXP Semiconductors |
5 / 13 page 74HC_HCT3G07_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 12 May 2009 5 of 13 NXP Semiconductors 74HC3G07; 74HCT3G07 Triple buffer with open-drain outputs [1] Typical values are measured at Tamb =25 °C. 11. Dynamic characteristics 74HCT3G07 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA; VCC = 4.5 V - 0 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.33 - 0.4 V II input leakage current VI =VCC or GND; VCC = 5.5 V - - ±1.0 - ±1.0 µA ILO output leakage current VI =VIH; VO =VCC or GND - - ±5.0 - ±10 µA ICC supply current per input pin; VCC = 5.5 V; VI =VCC or GND; IO =0A; - - 10 - 20 µA ∆ICC additional supply current per input; VCC = 4.5 V to 5.5 V; VI =VCC − 2.1 V; IO =0A - - 375 - 410 µA CI input capacitance - 1.5 - - - pF Table 7. Static characteristics …continued Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb =25 °C. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); all typical values are measured at Tamb =25 °C; for test circuit see Figure 7. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max 74HC3G07 tPZL OFF-state to LOW propagation delay nA to nY; see Figure 6 VCC = 2.0 V - 25 95 - 125 ns VCC = 4.5 V - 9 19 - 25 ns VCC = 6.0 V - 7 16 - 20 ns tPLZ LOW to OFF-state propagation delay nA to nY; see Figure 6 VCC = 2.0 V - 25 95 - 125 ns VCC = 4.5 V - 11 23 - 30 ns VCC = 6.0 V - 10 23 - 26 ns tTHL HIGH to LOW output transition time nY; see Figure 6 VCC = 2.0 V - 18 95 - 125 ns VCC = 4.5 V - 6 19 - 25 ns VCC = 6.0 V - 5 16 - 20 ns CPD power dissipation capacitance VI = GND to VCC [1] -4- - - pF |
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