74HCT2G34GV datasheet(5/14 Pages) NXP

No de pièce	74HCT2G34GV

Description	Dual buffer gate

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Fabricant	NXP [NXP Semiconductors]

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5 / 14 page

74HC_HCT2G34_1

Product data sheet

Rev. 01 — 6 October 2006

5 of 14

NXP Semiconductors

74HC2G34; 74HCT2G34

Dual buffer gate

Tamb = −40 °C to +85 °C

VIH

HIGH-level input voltage

VCC = 2.0 V

1.5

-

V

VCC = 4.5 V

3.15

-

V

VCC = 6.0 V

4.2

-

V

VIL

LOW-level input voltage

VCC = 2.0 V

-

0.5

V

VCC = 4.5 V

-

1.35

V

VCC = 6.0 V

-

1.8

V

VOH

HIGH-level output voltage

VI = VIH or VIL

IO = −20 µA; VCC = 2.0 V

1.9

-

V

IO = −20 µA; VCC = 4.5 V

4.4

-

V

IO = −20 µA; VCC = 6.0 V

5.9

-

V

IO = −4.0 mA; VCC = 4.5 V

4.13

-

V

IO = −5.2 mA; VCC = 6.0 V

5.63

-

V

VOL

LOW-level output voltage

VI = VIH or VIL

IO = 20 µA; VCC = 2.0 V

-

0.1

V

IO = 20 µA; VCC = 4.5 V

-

0.1

V

IO = 20 µA; VCC = 6.0 V

-

0.1

V

IO = 4.0 mA; VCC = 4.5 V

-

0.33

V

IO = 5.2 mA; VCC = 6.0 V

-

0.33

V

II

input leakage current

VI = GND or VCC; VCC = 6.0 V

-

±1.0

µA

ICC

supply current

VI = GND or VCC; IO = 0 A;

VCC = 6.0 V

-

10.0

µA

Tamb = −40 °C to +125 °C

VIH

HIGH-level input voltage

VCC = 2.0 V

1.5

-

V

VCC = 4.5 V

3.15

-

V

VCC = 6.0 V

4.2

-

V

VIL

LOW-level input voltage

VCC = 2.0 V

-

0.5

V

VCC = 4.5 V

-

1.35

V

VCC = 6.0 V

-

1.8

V

VOH

HIGH-level output voltage

VI = VIH or VIL

IO = −20 µA; VCC = 2.0 V

1.9

-

V

IO = −20 µA; VCC = 4.5 V

4.4

-

V

IO = −20 µA; VCC = 6.0 V

5.9

-

V

IO = −4.0 mA; VCC = 4.5 V

3.7

-

V

IO = −5.2 mA; VCC = 6.0 V

5.2

-

V

Table 7.

Static characteristics for 74HC2G34 …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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