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74AUP2G132GM Fiches technique(PDF) 10 Page - NXP Semiconductors |
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74AUP2G132GM Fiches technique(HTML) 10 Page - NXP Semiconductors |
10 / 19 page 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 10 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 14. Transfer characteristics 15. Waveforms transfer characteristics Table 11. Transfer characteristics Voltages are referenced to GND (ground=0V; for test circuit see Figure 9. Symbol Parameter Conditions Tamb = 25 °C Tamb = −40 °C to +125 °C Unit Min Typ Max Min Max (85 °C) Max (125 °C) VT+ positive-going threshold voltage see Figure 10 and Figure 11 VCC = 0.8 V 0.30 - 0.60 0.30 0.60 0.62 V VCC = 1.1 V 0.53 - 0.90 0.53 0.90 0.92 V VCC = 1.4 V 0.74 - 1.11 0.74 1.11 1.13 V VCC = 1.65 V 0.91 - 1.29 0.91 1.29 1.31 V VCC = 2.3 V 1.37 - 1.77 1.37 1.77 1.80 V VCC = 3.0 V 1.88 - 2.29 1.88 2.29 2.32 V VT− negative-going threshold voltage see Figure 10 and Figure 11 VCC = 0.8 V 0.10 - 0.60 0.10 0.60 0.60 V VCC = 1.1 V 0.26 - 0.65 0.26 0.65 0.65 V VCC = 1.4 V 0.39 - 0.75 0.39 0.75 0.75 V VCC = 1.65 V 0.47 - 0.84 0.47 0.84 0.84 V VCC = 2.3 V 0.69 - 1.04 0.69 1.04 1.04 V VCC = 3.0 V 0.88 - 1.24 0.88 1.24 1.24 V VH hysteresis voltage (VT+ − VT−); see Figure 10, Figure 11, Figure 12 and Figure 13 VCC = 0.8 V 0.07 - 0.50 0.07 0.50 0.50 V VCC = 1.1 V 0.08 - 0.46 0.08 0.46 0.46 V VCC = 1.4 V 0.18 - 0.56 0.18 0.56 0.56 V VCC = 1.65 V 0.27 - 0.66 0.27 0.66 0.66 V VCC = 2.3 V 0.53 - 0.92 0.53 0.92 0.92 V VCC = 3.0 V 0.79 - 1.31 0.79 1.31 1.31 V VT+ and VT− limits at 70 % and 20 %. Fig 10. Transfer characteristic Fig 11. Definition of VT+, VT− and VH mna207 VO VI VH VT+ VT− mna208 VO VI VH VT+ VT− |
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