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74ABT652ADB Fiches technique(PDF) 8 Page - NXP Semiconductors

No de pièce 74ABT652ADB
Description  Octal transceiver/register; non-inverting; 3-state
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

74ABT652ADB Fiches technique(HTML) 8 Page - NXP Semiconductors

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74ABT652A_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 12 March 2010
8 of 19
NXP Semiconductors
74ABT652A
Octal transceiver/register; non-inverting; 3-state
9.
Static characteristics
[1]
For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.
[2]
This parameter is valid for any VCC between 0 V and 2.1 V with a transition time of up to 10 ms. For VCC = 2.1 V to VCC =5V ± 10 %, a
transition time of up to 100
µs is permitted.
[3]
Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
[4]
This is the increase in supply current for each input at 3.4 V.
[5]
This data sheet limit may vary among suppliers.
Table 6.
Static characteristics
Symbol Parameter
Conditions
25
°C
−40 °Cto+85 °C Unit
Min
Typ
Max
Min
Max
VIK
input clamping voltage
VCC = 4.5 V; IIK = −18 mA
−1.2
−0.9
-
−1.2
-
V
VOH
HIGH-level output
voltage
VI = VIL or VIH
VCC = 4.5 V; IOH = −3 mA
2.5
3.0
-
2.5
-
V
VCC = 5.0 V; IOH = −3 mA
3.0
3.5
-
3.0
-
V
VCC = 4.5 V; IOH = −32 mA
2.0
2.4
-
2.0
-
V
VOL
LOW-level output voltage VCC = 4.5 V; IOL =64mA;
VI =VIL or VIH
-
0.3
0.55
-
0.55
V
VOL(pu)
power-up LOW-level
output voltage
VCC = 5.5 V; IO = 1 mA;
VI = GND or VCC
[1]
-
0.13
0.55
-
0.55
V
II
input leakage current
VCC = 5.5 V; VI = GND or 5.5 V
control pins
-
±0.01 ±1.0
-
±1.0
µA
data pins
-
±5
±100
-
±100
µA
IOFF
power-off leakage current VCC = 0 V; VI or VO ≤ 4.5 V
-
±5.0 ±100
-
±100
µA
IO(pu/pd)
power-up/power-down
output current
VCC = 2.1 V; VO = 0.5 V;
VI = GND or VCC; OEAB, OEBA
don’t care
[2]
-
±5.0
±50
-
±50
µA
IOZ
OFF-state output current
VCC = 5.5 V; VI =VIL or VIH
VO = 2.7 V
-
5.0
50
-
50
µA
VO = 0.5 V
-
−5.0
−50
-
−50
µA
ILO
output leakage current
VCC = 5.5 V; HIGH-state;
VO = 5.5 V; VI = GND or VCC
-
5.0
50
-
50
µA
IO
output current
VCC = 5.5 V; VO = 2.5 V
[3][5]
−180
−65
−40
−180
−40
mA
ICC
supply current
VCC = 5.5 V; VI = GND or VCC
outputs HIGH-state
-
110
250
-
250
µA
outputs LOW-state
-
20
30
-
30
mA
outputs disabled
-
110
250
-
250
µA
∆ICC
additional supply current
per input pin; VCC = 5.5 V; one
input at 3.4 V; other inputs at VCC
or GND
[4]
-
0.3
1.5
-
1.5
mA
CI
input capacitance
VI = 0 V or VCC
-4
-
-
-
pF
CO
output capacitance
outputs disabled; VO =0V
or VCC
-7
-
-
-
pF


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