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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2PC4081Q Fiches technique(PDF) 3 Page - NXP Semiconductors |
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2PC4081Q Fiches technique(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page  2PC4081_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 3 of 7 NXP Semiconductors 2PC4081 NPN general-purpose transistor 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. Table 6. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current IE =0 A; VCB = 30 V - - 100 nA IE =0 A; VCB =30 V; Tj = 150 °C -- 5 μA IEBO emitter-base cut-off current IC =0 A; VEB = 4 V - - 100 nA hFE DC current gain IC =1mA; VCE =6 V 2PC4081Q 120 - 270 2PC4081R 180 - 390 2PC4081S 270 - 560 VCEsat collector-emitter saturation voltage IC =50mA; IB =5mA [1] - - 400 mV Cc collector capacitance IE =ie =0 A; VCB =12V; f=1MHz -2 3.5 pF fT transition frequency IC =2mA; VCE =12 V; f = 100 MHz 100 --MHz |
Numéro de pièce similaire - 2PC4081Q |
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Description similaire - 2PC4081Q |
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