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2PB710ARL Fiches technique(PDF) 3 Page - NXP Semiconductors |
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2PB710ARL Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 9 page 2PB710AXL_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 29 October 2008 3 of 9 NXP Semiconductors 2PB710ARL; 2PB710ASL 50 V, 500 mA PNP general-purpose transistors 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −60 V VCEO collector-emitter voltage open base - −50 V VEBO emitter-base voltage open collector - −5V IC collector current - −500 mA ICM peak collector current single pulse; tp ≤ 1ms - −1A IBM peak base current single pulse; tp ≤ 1ms - −200 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 500 K/W Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −60 V; IE =0A - - −10 nA VCB = −60 V; IE =0A; Tj = 150 °C -- −5 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −10 nA hFE DC current gain VCE = −10 V; IC = −500 mA [1] 40 - - hFE group R VCE = −10 V; IC = −150 mA [1] 120 - 240 hFE group S VCE = −10 V; IC = −150 mA [1] 170 - 340 VCEsat collector-emitter saturation voltage IC = −300 mA; IB = −30 mA [1] -- −600 mV |
Numéro de pièce similaire - 2PB710ARL |
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Description similaire - 2PB710ARL |
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