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SS6610GOTR Fiches technique(PDF) 4 Page - Silicon Standard Corp. |
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SS6610GOTR Fiches technique(HTML) 4 Page - Silicon Standard Corp. |
4 / 16 page www.SiliconStandard.com 4 of 16 SS6610/11G 4/21/2006 Rev.3.01 ELECTRICAL CHARACTERISTICS (Continued) PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT LX switch on-time VFB =1V , VOUT = 3.3V 2 4 7 µs LX switch off-time VFB =1V , VOUT = 3.3V 0.6 0.9 1.4 µs FB input current VFB = 1.4V 0.03 50 nA LBI input current VLBI = 1.4V 1 50 nA SHDN input current V SHDN = 0 or VOUT 0.07 50 nA LBO low output voltage VLBI = 0, ISINK = 1mA 0.2 0.4 µA LBO off leakage current V LBO = 5.5V, VLBI = 5.5V 0.07 1 µΑ LBI hystereisis 50 mV VIL 0.2VOUT SHDN input voltage VIH 0.8VOUT V Note 1: Start-up voltage operation is guaranteed without the addition of an external Schottky diode between the input and output. Note 2: Steady-state output current indicates that the device maintains output voltage regulation under load. Note 3: Device is bootstrapped (power to the IC comes from OUT). This correlates directly with the actual battery supply. |
Numéro de pièce similaire - SS6610GOTR |
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Description similaire - SS6610GOTR |
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