FDS6898AZ datasheet(1/5 Pages) FAIRCHILD

No de pièce	FDS6898AZ

Description	Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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FDS6898AZ_F085

Dual N-Channel Logic Level PWM Optimized PowerTrench®® MOSFET

General Description

These N-Channel Logic Level MOSFETs are produced

using

Fairchild

Semiconductor’s

advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

• 9.4 A, 20 V

RDS(ON) = 14 mΩ @ VGS = 4.5 V

RDS(ON) = 18 mΩ @ VGS = 2.5 V

• Low gate charge (16 nC typical)

• ESD protection diode (note 3)

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

S

D

S

SO-8

D

G

D2

D1

S2

G2

S1

G1

Pin 1

SO-8

4

5

3

6

2

7

1

8

Q1

Q2

Absolute Maximum Ratings T

A=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

± 12

V

ID

Drain Current – Continuous

(Note 1a)

9.4

A

– Pulsed

38

Power Dissipation for Dual Operation

2

Power Dissipation for Single Operation

(Note 1a)

1.6

(Note 1b)

1

PD

(Note 1c)

0.9

W

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

40

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6898AZ

FDS6898AZ_F085

13’’

12mm

2500 units

• Qualified to AEC Q101

• RoHS Compliant

tm

February 2010

©20

10 Fairchild Semiconductor Corporation

FDS

6898AZ_F085 Rev. A

www.fairchildsemi.com

1

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