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TPD4125K Fiches technique(PDF) 8 Page - Toshiba Semiconductor

No de pièce TPD4125K
Description  Intelligent Power Device High Voltage Monolithic Silicon Power IC
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD4125K Fiches technique(HTML) 8 Page - Toshiba Semiconductor

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TPD4125K
2008-05-13
8
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VBB
500
V
Power supply voltage
VCC
18
V
Output current (DC)
Iout
3
A
Output current (pulse)
Ioutp
4
A
Input voltage
VIN
-0.5 to 7
V
VREG current
IREG
50
mA
Power dissipation
(IGBT 1 phase (Tc
= 25°C) )
PC
40
W
Power dissipation
(FRD1 phase (Tc
= 25°C) )
PC
26
W
Operating temperature
Tjopr
-20 to 135
°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Condition
Max
Unit
Thermal resistance,
junction to case
Rth(j-c) FRD
FRD 1 phase drive
4.8
℃/
W
Thermal resistance,
junction to case
Rth(j-c)IGBT
IGBT 1 phase drive
3.1
℃/
W


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