ACT108W-600E datasheet(3/13 Pages) PHILIPS

3 page

ACT108W-600E_4

Product data sheet

Rev. 04 — 9 December 2009

3 of 13

NXP Semiconductors

ACT108W-600E

AC Thyristor power switch

Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDRM

repetitive peak off-state

voltage

-600

IT(RMS)

RMS on-state current

full sine wave; Tsp ≤ 112 °C;

see Figure 3, 1 and 2

-0.8

ITSM

non-repetitive peak

on-state current

full sine wave; Tj(init) =25°C; tp =16.7ms

8.8

full sine wave; Tj(init) =25°C; tp =20ms;

see Figure 4 and 5

-8

I2tI2t for fusing

tp = 10 ms; sine-wave pulse

0.32

A2s

dIT/dt

rate of rise of on-state

current

IT =1A; IG =20mA; dIG/dt = 0.2 A/µs

100

A/µs

IGM

peak gate current

t = 20

μs-

VGM

peak gate voltage

positive applied gate voltage

PG(AV)

average gate power

over any 20 ms period

0.1

Tstg

storage temperature

-40

150

°C

junction temperature

125

°C

VPP

peak pulse voltage

Tj = 25 °C; non-repetitive, off-state;

see Figure 6

-2

Fig 1.

RMS on-state current as a function of surge

duration; maximum values

Fig 2.

RMS on-state current as a function of solder

point temperature; maximum values

003aac822

10−2

10−1

110

surge duration (s)

IT(RMS)

(A)

003aac807

0.2

0.4

0.6

0.8

−

100

150

Tsp(°C)

IT(RMS)

(A)

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