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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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KDR582S Fiches technique(PDF) 1 Page - KEC(Korea Electronics) |
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KDR582S Fiches technique(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  2009. 12. 9 1/2 SEMICONDUCTOR TECHNICAL DATA KDR582S SCHOTTKY BARRIER TYPE DIODE Revision No : 0 FOR HIGH SPEED SWITCHING. FEATURES ・Low reverse current, low capacitance. MAXIMUM RATING (Ta=25℃) DIM MILLIMETERS SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 G1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 M E 1 2 3 B 1.30 MAX LL PP P7 + _ ELECTRICAL CHARACTERISTICS (Ta=25℃) Lot No. Type Name Marking MC CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VR 4 V Reverse Voltage VR 4 V Forward Current IF 130 mA Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=0.1mA 0.2 - 0.35 V IF=1mA 0.25 - 0.45 IF=10mA 0.35 - 0.6 Reverse Current IR VR=3V - - 0.25 μA VR=3V, TA=60℃ - - 1.25 Total Capacitance CT VR=0V, f=1MHz 0.4 - 0.75 pF Series Resistance rS IF=5mA, f=10kHz - - 15 Ω |
Numéro de pièce similaire - KDR582S |
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Description similaire - KDR582S |
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