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BDX20 Fiches technique(PDF) 1 Page - Comset Semiconductor |
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BDX20 Fiches technique(HTML) 1 Page - Comset Semiconductor |
1 / 2 page COMSET SEMICONDUCTORS 1/2 BDX20 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector to Base Voltage -60 V VCEO #Collector-Emitter Voltage -140 V VCEX Collector-Emitter Voltage VBE=1.5 V -160 V VEBO Emitter-Base Voltage -7 V IC Collector Current – Continuous -10 A IB Base Current – Continuous -7 A PTOT Total Device Dissipation 117 Watts TJ Junction Temperature 200 °C TS Storage Temperature -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Thermal Resistance, Junction to Case 1.5 °C/W PNP SILICON TRANSISTORS EPITAXIAL BASE LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection |
Numéro de pièce similaire - BDX20 |
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Description similaire - BDX20 |
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