Moteur de recherche de fiches techniques de composants électroniques |
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BD130 Fiches technique(PDF) 1 Page - Comset Semiconductor |
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BD130 Fiches technique(HTML) 1 Page - Comset Semiconductor |
1 / 3 page COMSET SEMICONDUCTORS 1/3 BD130 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 100 V VCEX Collector-Emitter Voltage VBE=-1.5 V 100 V IC Collector Current 15 A IB Base Current 7 A PT Power Dissipation @ TC = 45° 100 Watts TJ Junction Temperature TS Storage Temperature -55 to +200 °C The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO- 3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS |
Numéro de pièce similaire - BD130 |
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Description similaire - BD130 |
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