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2N2222 Datasheet(Fiches technique) 2 Page - Comset Semiconductor

Numéro de pièce 2N2222
Description  SILICON PLANAR EPITAXIAL TRANSISTORS
Télécharger  3 Pages
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Fabricant  COMSET [Comset Semiconductor]
Site Internet  http://comset.halfin.com
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PNP 2N2907 – 2N2907A
NPN 2N2222 – 2N2222A
COMSET SEMICONDUCTORS
3
/3
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx
Unit
VCB=-50 V, IE=0V
2N2907A
-
-
-10
ICBO
Collector Cutoff Current
VCB=-50 V, IE=0V
2N2907
-
-
-20
nA
VCB=-50 V, IE=0V, Tj=150°C
2N2907A
-
-
-10
ICBO
Collector Cutoff Current
VCB=-50 V, IE=0V, Tj=150°C
2N2907
-
-
-20
µA
2N2907A
ICEX
Collector Cutoff Current
VCE=-30 V, VBE=0.5V
2N2907
-
-
-50
nA
2N2907A
-60
-
-
VCEO
Collector Emitter Breakdown
Voltage
IC=-10 mA, IB=0
2N2907
-40
-
-
V
2N2907A
-60
-
-
VCBO
Collector Base Breakdown
Voltage
IC=-10 µA, IE=0
2N2907
-60
-
-
V
2N2907A
-5
-
-
VEBO
Emitter Base Breakdown
Voltage
IE=-10 µA, IC=0
2N2907
-5
-
-
V
2N2907A
IC=-0.1 mA, VCE=-10 V
2N2907
75
-
-
2N2907A
IC=-1 mA, VCE=-10 V
2N2907
100
-
-
2N2907A
IC=-10 mA, VCE=-10 V
2N2907
100
-
-
2N2907A
IC=-150 mA, VCE=-10 V
2N2907
100
-
300
2N2907A
50
-
-
hFE
DC Current Gain
IC=-500 mA, VCE=-10 V (1)
2N2907
30
-
-
-
2N2907A
-
-
-0.4
IC=-150 mA, IB=-15 mA
2N2907
-
-
-0.4
2N2907A
-
-
-1.6
VCE(SAT)
Collector-Emitter saturation
Voltage (1)
IC=-500 mA, IB=-50 mA
2N2907
-
-
-1.6
2N2907A
-
-
-1.3
IC=-150 mA, IB=-15 mA
2N2907
-
-
-1.3
2N2907A
-
-
-2.6
VBE(SAT)
Base-Emitter saturation
Voltage (1)
IC=-500 mA, IB=-50 mA
2N2907
-
-
-2.6
V
Symbol
Ratings
Test Condition(s)
Min Typ Mx
Unit
2N2907A
200
-
-
fT
Transition frequency
IC=-50 mA, VCE=-20 V
f= 100MHz
2N2907
200
-
-
MHz
Symbol
Ratings
Test Condition(s)
Min Typ Mx
Unit
td
Delay time
2N2907A
-
-
10
tr
Rise time
IC=-150 mA ,IB =-15 mA
-VCC=-30 V
2N2907
-
-
40
ns
2N2907A
CC
Collector capacitance
IE= Ie = 0 ,VCB=-10 V
f = 100kHz
2N2907
-
-
8
pF
2N2907A
CE
Emitter capacitance
IC= Ic = 0 ,VEB=-0.5 V
f = 100kHz
2N2907
-
-
30
pF




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