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TC551001BPL Fiches technique(PDF) 7 Page - Toshiba Semiconductor |
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TC551001BPL Fiches technique(HTML) 7 Page - Toshiba Semiconductor |
7 / 13 page SR01020795 Static RAM TC551001BPL/BFL/BFTL/BTRL-70L/85L TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC . 7 Notes: 1. R/W is High for Read Cycle. 2. Assuming that CE1 Low transition or CE2 High transition occurs coincident with or after the R/W low transition, Out- puts remain in a high impedance state. 3. Assuming that CE1 High transition or CE2 Low transition occurs coincident with or prior to the R/W high transition, Outputs remain in a high impedance state. 4. Assuming that OE is High for a Write Cycle, Outputs are in a high impedance state during this period. 5. The I/O may be in the output state during this time, input signals of opposite phase must not be applied. |
Numéro de pièce similaire - TC551001BPL |
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Description similaire - TC551001BPL |
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