BC639-16 datasheet(3/4 Pages) ONSEMI

No de pièce	BC639-16

Description	High Current Transistors

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Fabricant	ONSEMI [ON Semiconductor]

Site Internet	http://www.onsemi.com

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BC637, BC639, BC639−16

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VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

BC635

BC637

BC639

PD TA 25°C

PD TC 25°C

SOA = 1S

PD TC 25°C

PD TA 25°C

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IC, COLLECTOR CURRENT (mA)

Figure 2. DC Current Gain

VCE = 2 V

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IC, COLLECTOR CURRENT (mA)

Figure 3. Current−Gain — Bandwidth Product

VCE = 2 V

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IC, COLLECTOR CURRENT (mA)

Figure 4. “Saturation” and “On” Voltages

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 2 V

VCE(sat) @ IC/IB = 10

−0.2

−1.0

−2.2

−1.6

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IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

VCE = 2 VOLTS

DT = 0°C to +100°C

qV for VBE

Numéro de pièce similaire - BC639-16

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BC639-16	43Kb / 8P	NPN medium power transistors 1999 Apr 23
Micro Commercial Compon...	BC639-16	335Kb / 3P	NPN Epitaxial Silicon Transistors
NXP Semiconductors	BC639-16	161Kb / 15P	80 V, 1 A NPN medium power transistors Rev. 08-22 June 2007
Micro Commercial Compon...	BC639-16	346Kb / 3P	NPN Epitaxial Silicon Transistors

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Description similaire - BC639-16

Fabricant	No de pièce	Fiches technique	Description
Motorola, Inc	BC490	249Kb / 6P	High Current Transistors
ON Semiconductor	BC636	56Kb / 4P	High Current Transistors June, 2000 ??Rev. 1
ON Semiconductor	BC637	98Kb / 4P	High Current Transistors February, 2011 ??Rev. 1
Motorola, Inc	BC635	116Kb / 4P	High Current Transistors
Motorola, Inc	BC636	116Kb / 4P	High Current Transistors
ON Semiconductor	BC490	84Kb / 6P	High Current Transistors March, 2007 ??Rev. 3
	BC640-016G	94Kb / 4P	High Current Transistors June, 2011 ??Rev. 1
	BC640	65Kb / 4P	High Current Transistors March, 2007 ??Rev. 0
	BC490G	74Kb / 6P	High Current Transistors March, 2007 ??Rev. 3
Motorola, Inc	BC489	235Kb / 6P	High Current Transistors

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