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AT45DB321D-TU Datasheet(Fiches technique) 1 Page - ATMEL Corporation

Numéro de pièce AT45DB321D-TU
Description  32-megabit 2.7-volt DataFlash
Télécharger  57 Pages
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Fabricant  ATMEL [ATMEL Corporation]
Site Internet  http://www.atmel.com
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Features
Single 2.7V - 3.6V Supply
RapidS Serial Interface: 66 MHz Maximum Clock Frequency
– SPI Compatible Modes 0 and 3
User Configurable Page Size
– 512 Bytes per Page
– 528 Bytes per Page
– Page Size Can Be Factory Pre-configured for 512 Bytes
Page Program Operation
– Intelligent Programming Operation
– 8,192 Pages (512/528 Bytes/Page) Main Memory
Flexible Erase Options
– Page Erase (512 Bytes)
– Block Erase (4 Kbytes)
– Sector Erase (64 Kbytes)
– Chip Erase (32 Mbits)
Two SRAM Data Buffers (512/528 Bytes)
– Allows Receiving of Data while Reprogramming the Flash Array
Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
Low-power Dissipation
– 7 mA Active Read Current Typical
– 25 µA Standby Current Typical
– 15 µA Deep Power Down Typical
Hardware and Software Data Protection Features
– Individual Sector
Sector Lockdown for Secure Code and Data Storage
– Individual Sector
Security: 128-byte Security Register
– 64-byte User Programmable Space
– Unique 64-byte Device Identifier
JEDEC Standard Manufacturer and Device ID Read
100,000 Program/Erase Cycles Per Page Minimum
Data Retention – 20 Years
Industrial Temperature Range
Green (Pb/Halide-free/RoHS Compliant) Packaging Options
1. Description
The AT45DB321D is a 2.7-volt, serial-interface sequential access Flash memory
ideally suited for a wide variety of digital voice-, image-, program code- and data-stor-
age applications. The AT45DB321D supports RapidS serial interface for applications
requiring very high speed operations. RapidS serial interface is SPI compatible for
frequencies up to 66 MHz. Its 34,603,008 bits of memory are organized as 8,192
pages of 512 bytes or 528 bytes each. In addition to the main memory, the
AT45DB321D also contains two SRAM buffers of 512/528 bytes each. The buffers
allow the receiving of data while a page in the main Memory is being reprogrammed,
as well as writing a continuous data stream. EEPROM emulation (bit or byte alterabil-
ity) is easily handled with a self-contained three step read-modify-write operation.
Unlike conventional Flash memories that are accessed randomly with multiple
address lines and a parallel interface, the DataFlash uses a RapidS serial interface to
32-megabit
2.7-volt
DataFlash®
AT45DB321D
3597N–DFLASH–04/09




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